 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IRF7475 Datasheet(PDF) 2 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
IRF7475 Datasheet(HTML) 2 Page - International Rectifier |
|
|
2 / 10 page  IRF7475 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 12 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.014 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 11.5 15 m Ω ––– 20 50 VGS(th) Gate Threshold Voltage 0.6 ––– 2.0 V ∆VGS(th) Gate Threshold Voltage Coefficient ––– 3.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 100 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 gfs Forward Transconductance 22 ––– ––– S Qg Total Gate Charge ––– 13 19 Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.6 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.5 ––– nC Qgd Gate-to-Drain Charge ––– 3.9 ––– Qgodr Gate Charge Overdrive ––– 5.0 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 5.4 ––– Qoss Output Charge ––– 17 ––– nC td(on) Turn-On Delay Time ––– 7.5 ––– tr Rise Time –––33––– td(off) Turn-Off Delay Time ––– 13 ––– ns tf Fall Time ––– 7.5 ––– Ciss Input Capacitance ––– 1590 ––– Coss Output Capacitance ––– 1310 ––– pF Crss Reverse Transfer Capacitance ––– 260 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy dh mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 11 (Body Diode) A ISM Pulsed Source Current ––– ––– 88 (Body Diode) Ãh VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 42 63 ns Qrr Reverse Recovery Charge ––– 44 66 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VDS = 10V, VGS = 0V VDD = 6.0V, VGS = 4.5V f ID = 8.8A VDS = 6.0V VGS = 12V VGS = -12V Conditions 0.25 Max. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 8.8A f VDS = VGS, ID = 250µA VDS = 9.6V, VGS = 0V VDS = 9.6V, VGS = 0V, TJ = 125°C Clamped Inductive Load VDS = 6.0V, ID = 8.8A 180 TJ = 25°C, IF = 8.8A, VDD = 10V di/dt = 100A/µs f TJ = 25°C, IS = 8.8A, VGS = 0V f showing the integral reverse p-n junction diode. 8.8 MOSFET symbol VGS = 2.8V, ID = 5.5A f ––– VGS = 4.5V Typ. ––– ––– ID = 7.0A VGS = 0V VDS = 6.0V ƒ = 1.0MHz |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
