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STO68N65DM6 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STO68N65DM6
Description  N-channel 650 V, 53 m typ., 55 A MDmesh DM6 Power MOSFET in a TO‑LL package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STO68N65DM6 Datasheet(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG060520210745SOA
10 2
10 1
10 0
10 -1
10 -2
10-1
100
101
102
ID
(A)
VDS (V)
tp =1µs
tp =10µs
tp =100µs
tp =1ms
tp =10ms
V(BR)DSS
Operation
in
this
area
is limited
by
R
DS(on)
RDS(on) max.
Single pulse
TJ = 175 °C
TC = 25 °C
IDM
Figure 2. Maximum transient thermal impedance
GADG060520210748ZTH
10 -1
10 -2
10 -3
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
tp (s)
ton
T
duty = ton / T
RthJC = 0.52 °C/W
ZthJC
(°C/W)
Single pulse
0.1
0.05
duty=0.5
0.4
0.3 0.2
Figure 3. Typical output characteristics
GADG060520201021OCH
160
120
80
40
0
0
4
8
12
16
ID
(A)
VDS (V)
VGS =7 V
VGS =8 V
VGS =9, 10 V
VGS =6 V
Figure 4. Typical transfer characteristics
GADG060520201021TCH
160
120
80
40
0
0
2
4
6
8
ID
(A)
VGS (V)
VDS = 20 V
Figure 5. Typical gate charge characteristics
GADG060520201022QVG
600
500
400
300
200
100
0
12
10
8
6
4
2
0
0
16
32
48
64
80
96
VDS
(V)
VGS
(V)
Qg (nC)
VDD = 520 V
Qgs
Qgd
ID = 48 A
Qg
VDS
Figure 6. Typical drain-source on-resistance
GADG060520210749RID
59
58
57
56
55
54
53
52
0
8
16
24
32
40
48
56
RDS(on)
(mΩ)
ID (A)
VGS = 10 V
STO68N65DM6
Electrical characteristics (curves)
DS13723 - Rev 1
page 5/15



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