SH8MA4

　　30V Nch+Pch Power MOSFET

　　

Datasheet

l

lOutline

Symbol

Tr1:Nch Tr2:Pch

　

VDSS

30V

-30V

RDS(on)(Max.)

21.4mΩ 29.6mΩ

SOP8

ID

±9.0A

±8.5A

　

PD

3.0W

　

　 　 　 　 　 　

l

lFeatures

l

lInner circuit

1) Low on - resistance

2) Small Surface Mount Package (SOP8)

3) Pb-free lead plating ; RoHS compliant

4) Halogen Free

l

lPackaging specifications

Type

Packing

Embossed

Tape

l

lApplication

Reel size (mm)

330

Switching

Tape width (mm)

12

Quantity (pcs)

2500

Taping code

TB1

Marking

SH8MA4

l

lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)

Parameter

Symbol

Value

Unit

Tr1:Nch Tr2:Pch

Drain - Source voltage

VDSS

30

-30

V

Continuous drain current

ID*1

±9.0

±8.5

A

Pulsed drain current

IDP*2

±18

±18

A

Gate - Source voltage

VGSS

±20

±20

V

Avalanche current, single pulse

IAS*3

9.0

-8.5

A

Avalanche energy, single pulse

EAS*3

5.7

10.5

mJ

Power dissipation (total)

　

PD*1

3.0

W

PD*4

2.0

PD*5

1.4

Junction temperature

Tj

150

℃

Operating junction and storage temperature range

Tstg

-55 to +150

℃

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　

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