1

Composite Transistors

XP04286

Silicon NPN epitaxial planer transistor (Tr1)

Silicon PNP epitaxial planer transistor (Tr2)

For switching/digital circuits

q

Two elements incorporated into one package.

(Transistors with built-in resistor)

q

Reduction of the mounting area and assembly cost by one half.

q

UN221N+UN1119

Unit: mm

Marking Symbol:

HO

Internal Connection

Parameter

Symbol

Ratings

Unit

Collector to base voltage

50

V

Collector to emitter voltage

50

V

Collector current

100

mA

Collector to base voltage

–50

V

Collector to emitter voltage

–50

V

Collector current

–100

mA

Total power dissipation

150

mW

Junction temperature

150

˚C

Storage temperature

–55 to +150

˚C

Tr1

Overall

Tr2

1

Tr2

Tr1

2

34

5

6

1 : Emitter (Tr1)

4 : Emitter (Tr2)

2 : Base (Tr1)

5 : Base (Tr2)

3 : Collector (Tr2) 6 : Collector (Tr1)

EIAJ : SC–88

S–Mini Type Package (6–pin)

2.1

±0.1

1.25

±0.1

0.425

0.425

1

2

3

6

5

4

0.2

±0.1