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STB25NF06AG Datasheet(PDF) 3 Page - STMicroelectronics |
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STB25NF06AG Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() STB25NF06AG Electrical ratings DocID029340 Rev 1 3/15 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at Tcase = 25 °C 19 A Drain current (continuous) at Tcase = 100 °C 13 IDM(1) Drain current (pulsed) 76 A PTOT Total dissipation at Tcase = 25 °C 50 W IAV Non-repetitive avalanche current 10 A EAS Single pulse avalanche energy 220 mJ Tstg Storage temperature range -55 to 175 °C Tj Operating junction temperature range Notes: (1) Pulse width is limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max. 3.00 °C/W Rthj-pcb(1) Thermal resistance junction-pcb max. 35 Notes: (1)When mounted on 1 inch², 2oz Cu, FR-4 board |
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