STB25NF06AG datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STB25NF06AG

4/15

DocID029340 Rev 1

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0 V, ID = 250 µA

IDSS

Zero gate voltage

drain current

VGS = 0 V, VDS = 60 V

µA

VGS = 0 V, VDS = 60 V,

Tcase = 125 °C(1)

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ±20 V

±100

µA

VGS(th)

Gate threshold

voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 10 A

0.056

0.070

Notes:

(1)Defined by design, not subject to production test

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz, VGS = 0 V

387

Coss

Output capacitance

103

Crss

Reverse transfer

capacitance

Total gate charge

VDD = 30 V, ID = 19 A, VGS = 10 V

(see Figure 14: "Test circuit for gate

charge behavior")

14.1

Qgs

Gate-source

charge

2.8

Qgd

Gate-drain charge

5.4

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 30 V, ID = 10 A RG = 4.7

Ω,

VGS = 10 V (see Figure 13: "Test

circuit for resistive load switching

times" and Figure 18: "Switching

time waveform")

Rise time

td(off)

Turn-off delay time

Fall time

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