MAC97A8 datasheet(4/12 Pages) PHILIPS

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Philips Semiconductors

MAC97A8; MAC97A6

Logic level triac

Product speciﬁcation

Rev. 01 — 29 March 2001

4 of 12

9397 750 07917

Characteristics

Table 5:

Characteristics

Tj =25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

IGT

gate trigger current

VD = 12 V; IT = 0.1 A; Figure 8

T2+ G+

−

15mA

T2+ G

−−

25mA

− G−−

25mA

− G+

−

47mA

latching current

VD = 12 V; IGT = 0.1 A; Figure 9

T2+ G+

−

110

T2+ G

−−

510

− G−−

110

− G+

−

210

holding current

VD = 12 V; IGT = 0.1 A; Figure 10

−

110

on-state voltage

IT = 0.85 A; Figure 11

−

1.4

1.9

VGT

gate trigger voltage

VD = 12 V; IT = 0.1 A; Figure 7

−

0.9

VD =VDRM; IT = 0.1 A; Tj = 110 °C

0.1

0.7

−

off-state leakage current

VD =VDRM (max); Tj = 110 °C

−

100

µA

Dynamic characteristics

dVD/dt

critical rate of rise of

off-state voltage

VD = 67% of VDM(max);

Tcase = 110 °C; exponential

waveform; gate open circuit;

Figure 12

−

µs

dVcom/dt

critical rate of rise of

commutation voltage

VD = rated VDRM;Tcase =50 °C;

ITM = 0.84 A;

commutating dI/dt = 0.3 A/ms

−

µs

tgt

gate controlled turn-on

time

ITM = 1.0 A; VD =VDRM(max);

IG = 25 mA; dIG/dt=5A/µs

−

−µs

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