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Mechanical Drawing

Bias Arrangement

(Note: Engineering designator is 40BRFM0058)

Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.

Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold

All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)

Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.

Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.048 mg.

Bond Pad #1 (LO)

Bond Pad #2 (Vg1)

Bond Pad #3 (Vg2)

Bond Pad #4 (Vd)

Bond Pad #5 (RF)

Bond Pad #6 (IF)

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2005 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

32.0-46.0 GHz GaAs MMIC

Balanced Mixer

M1000

0.386

(0.015)

0.983

(0.039)

2

3

4

5

6

1

0.785

(0.031)

1.300

(0.051)

0.993

(0.039)

0.0

0.0

0.536

(0.021)

1.300

(0.051)

0.993

(0.039)

Vg1

LO

RF

IF

2

3

4

5

6

1

App Note [1] Biasing - As shown in the bonding

diagram, the pHEMT mixer devices are operated using a

separate gate voltage Vg1. Set Vg1=-0.6V for optimum

conversion loss performance. pHEMT test device (Vd,Vg2)

with 100 Ohm resistor is provided so that mixer gate bias

App Note [2] Bias Arrangement - Each DC pad (Vg1)

needs to have DC bypass capacitance (~100-200 pF) as

close to the device as possible. Additional DC bypass

capacitance (~0.01 uF) is also recommended.

November 2005 - Rev 21-Nov-05