Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©

2005 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

May 2005 - Rev 05-May-05

Mimix Broadband

’

s two stage 27.0-35.0 GHz GaAs

MMIC power amplifier is optimized for linear operation

with a third order intercept point of +34.0 dBm. The

device also includes Lange couplers to achieve good

input/output return loss and an on-chip temperature

compensated output power detector. This MMIC uses

Mimix Broadband

’

s 0.15

µ

m GaAs PHEMT device model

technology, and is based upon electron beam

lithography to ensure high repeatability and

uniformity. The chip has surface passivation to protect

and provide a rugged part with backside via holes and

gold metallization to allow either a conductive epoxy

or eutectic solder die attach process. This device is well

suited for Millimeter-wave Point-to-Point Radio, LMDS,

SATCOM and VSAT applications.

27.0-35.0 GHz GaAs MMIC

Power Amplifier

Absolute Maximum Ratings

Page 1 of 6

General Description

Supply Voltage (Vd)

Supply Current (Id)

Gate Bias Voltage

Input Power (Pin)

Storage Temperature (Tstg)

Operating Temperature (Ta)

Channel Temperature (Tch)

+6.0 VDC

950 mA

+0.3 VDC

+15 dBm

-55 to MTTF Table

MTTF Table

(4) Channel temperature affects a device's MTTF. It is

recommended to keep channel temperature as low as

possible for maximum life.

4

Features

Chip Device Layout

4

Balanced Design Provides Good Input/Output Match

On-Chip Temperature Compensated Output

Power Detector

15.0 dB Small Signal Gain

+34.0 dBm Third Order Intercept (OIP3)

100% On-Wafer RF, DC and Output Power Testing

100% Visual Inspection to MIL-STD-883

Method 2010

Frequency Range (f )

Input Return Loss (S11)

Output Return Loss (S22)

Small Signal Gain (S21)

Gain Flatness (

∆S21)

Reverse Isolation (S12)

Output Power for 1 dB Compression (P1dB)

Output Third Order Intercept Point (OIP3)

Drain Bias Voltage (Vd1,2,3,4)

Gate Bias Voltage (Vg1,2,3,4)

Supply Current (Id) (Vd=4.5V, Vg=-0.7V Typical)

Detector (diff ) Output at 20 dBm

Parameter

Units

GHz

dB

dB

dB

dB

dB

dBm

dBm

VDC

VDC

mA

VDC

Min.

27.0

-

-

-

-

-

-

-

-

-1.0

-

-

Typ.

-

12.0

18.0

15.0

+/-1.0

35.0

+24.0

+34.0

+4.5

-0.7

440

0.3

Max.

35.0

-

-

-

-

-

-

-

+5.5

0.0

880

-

(1) Measured at +17 dBm per tone output carrier level across the full frequency band.

(2) Measured using constant current.

(3) Measured with either Vin=1.0V or Vin=5.5V and Rin=5.6k

Ω.

1,2

2

3

P1003