RF

Out

RF

In

Vd1,2

Vg1,2

V

OUT

1

V

IN

V

OUT

2

Vd3,4

Vg3,4

Rin

1

2

3

4

5

6

7

8

10

9

13

12

11

1

2

3

4

5

2.500

(0.098)

1.757

(0.069)

0.677

(0.027)

0.0

0.0

0.765

(0.030)

2.157

(0.085)

3.400

(0.134)

6

7

8

1.357

(0.053)

0.957

(0.038)

1.757

(0.069)

1.357

(0.053)

0.957

(0.038)

10

9

13

12

11

2.957

(0.116)

2.557

(0.101)

2.157

(0.085)

2.757

(0.109)

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©

2005 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

27.0-35.0 GHz GaAs MMIC

Power Amplifier

Page 3 of 6

Mechanical Drawing

(Note: Engineering designator is 30H2BA0093)

Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.

Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold

All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Pads are 0.100 x 0.200 (0.004 x 0.008).

Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.

Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 5.253 mg.

Bias Arrangement

Bond Pad #1 (RF In)

Bond Pad #2 (Vg1)

Bond Pad #3 (Vd2)

Bond Pad #4 (Vg2)

Bond Pad #5 (Vd2)

Bond Pad #9 (RF Out)

Bond Pad #10 (Vd4)

Bond Pad #11 (Vg4)

Bond Pad #12 (Vd3)

Bond Pad #13 (Vg3)

Bypass Capacitors - See App Note [3]

P1003

May 2005 - Rev 05-May-05