6.5 Thermal Information

THERMAL METRIC(1)

ESD751

ESD761

UNIT

DYA (SOD-523)

DPY (X1SON)

2 PINS

2 PINS

RθJA

Junction-to-ambient thermal resistance

746.3

282.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

301.2

150.6

°C/W

RθJB

Junction-to-board thermal resistance

509.6

98.3

°C/W

ΨJT

Junction-to-top characterization parameter

81.8

9.6

°C/W

ΨJB

Junction-to-board characterization parameter

503.0

97.7

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.6 Electrical Characteristics

over TA = 25°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

DEVICE

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off voltage

–24

24

V

VBRF

Breakdown voltage(1)

IIO = 10 mA, IO to GND

25.5

35.5

V

VBRR

IIO = –10 mA, IO to GND

–35.5

–25.5

VCLAMP

Clamping voltage(2)

IPP = 2.8 A, tp = 8/20 µs, IO to GND and

GND to IO

ESD751

36.5

V

IPP = 1.8 A, tp = 8/20 µs, IO to GND and

GND to IO

ESD761

36.3

Clamping voltage(3)

IPP = 16 A, TLP, IO to GND and GND to IO

ESD751

41.5

V

ESD761

42.5

ILEAK

Leakage current

VIO = ±24 V, IO to GND

-50

1

50

nA

RDYN

Dynamic resistance(3)

ESD751

0.6

Ω

ESD761

0.53

CL

Line capacitance

VIO = 0 V, f = 1 MHz, Vpp = 30 mV, IO to

GND

ESD751

1.6

2.7

pF

ESD761

1.1

1.8

(1)

VBRF and VBRR are defined as the voltage when ±10 mA is applied in the positive-going direction, before the device latches into the

snapback state.

(2)

Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

(3)

Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008

www.ti.com

ESD751, ESD761

SLVSH10C – NOVEMBER 2022 – REVISED DECEMBER 2022

Copyright © 2022 Texas Instruments Incorporated

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