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TTC008 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # TTC008
Description  Bipolar Transistors Silicon NPN Triple-Diffused Type
PDF  7 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TTC008 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TTC008
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (Taaaa = 25
= 25
= 25
= 25 
 unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (pulsed)
Base current
Collector power dissipation
Junction temperature
Storage temperature
(Note 1)
(Note 1)
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
600
600
285
7
1.5
3
0.75
1.1
150
-55 to 150
Unit
V
A
W
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150 .
2014-04-03
Rev.2.0



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