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SST26WF040BA Datasheet(PDF) 28 Page - Microchip Technology

Part # SST26WF040BA
Description  1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory
PDF  96 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

SST26WF040BA Datasheet(HTML) 28 Page - Microchip Technology

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SST26WF040B/040BA SST26WF080B/080BA
DS20005283C-page 28
 2014-2017 Microchip Technology Inc.
5.20
Page-Program
The Page-Program instruction programs up to 256
Bytes of data in the memory, and supports both SPI
and SQI protocols. The data for the selected page
address must be in the erased state (FFH) before initi-
ating the Page-Program operation. A Page-Program
applied to a protected memory area will be ignored.
Prior to the program operation, execute the WREN
instruction.
To execute a Page-Program operation, the host drives
CE# low then sends the Page Program command cycle
(02H), three address cycles followed by the data to be
programmed, then drives CE# high. The programmed
data must be between 1 to 256 Bytes and in whole Byte
increments; sending less than a full Byte will cause the
partial Byte to be ignored. Poll the BUSY bit in the Sta-
tus register, or wait TPP, for the completion of the inter-
nal, self-timed, Block-Erase operation. See Figures 5-
25 and 5-26 for the Page-Program sequence.
When executing Page-Program, the memory range for
the
SST26WF040B/040BA
and
SST26WF080B/
080BA is divided into 256 Byte page boundaries. The
device handles shifting of more than 256 Bytes of data
by maintaining the last 256 Bytes of data as the correct
data to be programmed. If the target address for the
Page-Program instruction is not the beginning of the
page boundary (A[7:0] are not all zero), and the num-
ber of bytes of data input exceeds or overlaps the end
of the address of the page boundary, the excess data
inputs wrap around and will be programmed at the start
of that target page.
FIGURE 5-25:
PAGE-PROGRAM SEQUENCE (SQI)
FIGURE 5-26:
PAGE-PROGRAM SEQUENCE (SPI)
20005283 F10.1
MODE 3
0
SCK
SIO(3:0)
CE#
C1 C0
MODE 0
2
A5 A4
MSN LSN
4
A3 A2
6
A1 A0
8
H0 L0
10
H1 L1
12
H2 L2
HN LN
Data Byte 0 Data Byte 1 Data Byte 2
Data Byte 255
Note:
M
20005283 F60.1
CE#
SO
SI
SCK
ADD.
01 2 3 4 5 6 7 8
ADD.
ADD.
Data Byte 0
02
HIGH IMPEDANCE
15 16
23 24
31 32
39
MODE 0
MODE 3
MSB
MSB
MSB
LSB
CE#(cont’)
SO(cont’)
SI(cont’)
SCK(cont’)
40 41 42 43 44 45 46
47 48
Data Byte 1
HIGH IMPEDANCE
MSB
MSB
MSB
LSB
50 51 52 53 54 55
49
Data Byte 2
Data Byte 255
LSB
LSB
LSB
LSB
Note: C[1:0] =
02H



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