TLP151

1

2019-10-10

© 2019

Toshiba Electronic Devices & Storage Corporation

TOSHIBA Photocoupler IRED + Photo IC

TLP151

Industrial Inverter

MOS FET / IGBT Gate Driver

IH(Induction Heating)

Operate at high ambient temperatures up to 110°C

The Toshiba TLP151 consists of an infrared LED and integrated high gain,

high-speed photodetectors. The TLP151 is housed in the SO6 package.

The photodetector has an internal Faraday shield that provides a guaranteed

common-mode transient immunity of ±15 kV/μs. TLP151 is suitable for direct

gate driving circuit for IGBTs or power MOSFETs.



Buffer logic type (Totem pole output)



Package type

: SO6



Peak Output Current

: IOP = ±0.6 A (max)



Guaranteed performance over temperature

: -40 to 110°C



Power supply voltage

: 10 to 30 V



Threshold Input Current

: IFLH = 5.0 mA (max)



Propagation delay time

: tpLH / tpHL = 700 ns (max)



Common mode transient immunity

: ±15 kV/μs （min）



Isolation voltage

: 3750 Vrms (min)



UL-recognized

: UL 1577, File No.E67349



cUL-recognized

: CSA Component Acceptance Service No.5A

File No.E67349



VDE-approved ：EN 60747-5-5 ,EN 62368-1 (Note 1)

Note 1 : When a VDE approved type is needed,

please designate the

Option(V4).

Truth Table

Input

LED

M1

M2

Output

H

ON

ON

OFF

H

L

OFF

OFF

ON

L

Construction Mechanical Ratings

JEDEC

―

JEITA

―

TOSHIBA

11-4L1

Weight

: 0.08 g (typ.)

Creepage distance

5.0 mm (min)

Clearance distance

5.0 mm (min)

Insulation thickness

0.4 mm (min)

1

3

4

5

6

SHIELD

1+

3−

VCC

VO

GND

(M1)

(M2)

ICC

IO

IF

VF

6

5

4

SHIELD

Unit

: mm

1

: ANODE

3

: CATHODE

4

: GND

5

: VO (Output)

6

: VCC

Pin Configuration (Top View)

Schematic

Start of commercial production

2009-10

1.27

1

3

5 4

3.7

± 0.15

7.0

± 0.4

6

0.4

2.54

0.5 min