STD35NF06LT4 datasheet(3/14 Pages) STMICROELECTRONICS

Part #	STD35NF06LT4

Description	N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package

PDF	14 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 14 page

STD35NF06L

Electrical ratings

Doc ID 7662 Rev 5

3/14

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

VDGR

Drain-gate voltage (RGS = 20 kΩ)60

VGS

Gate- source voltage

± 16

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

24.5

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

140

Ptot

Total dissipation at TC = 25 °C

Derating Factor

0.53

W/°C

dv/dt(2)

ISD ≤ 35 A, di/dt ≤ 100 A/µs, VDD =V(BR)DSS, Tj ≤ TJMAX

Peak diode recovery avalanche energy

V/ns

EAS

(3)

Starting Tj = 25 °C, ID = 30 A, VDD =30 V

Single pulse avalanche energy

280

Tstg

Storage temperature

-55 to 175

°C

Max. operating junction temperature

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

1.88

°C/W

Rthj-amb

Thermal resistance junction-to ambient max

100

°C/W

Maximum lead temperature for soldering

purpose

275

°C

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