Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2005 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

May 2005 - Rev 13-May-05

Mimix Broadband

’s 18.0-25.0 GHz GaAs MMIC receiver has a noise

figure of 2.5 dB and 15.0 dB image rejection across the band. This

device is a two stage balanced LNA followed by an image reject sub-

harmonic anti-parallel diode mixer and includes an integrated LO

buffer amplifer. The image reject mixer eliminates the need for a

bandpass filter after the LNA to remove thermal noise at the image

frequency. The use of a sub-harmonic mixer makes the provision of

the LO easier than for fundamental mixers at these frequencies. I and Q

mixer outputs are provided and an external 90 degree hybrid is

required to select the desired sideband. This MMIC uses Mimix

Broadband

’s 0.15 µm GaAs PHEMT device model technology, and is

based upon electron beam lithography to ensure high repeatability

and uniformity. The chip has surface passivation to protect and provide

a rugged part with backside via holes and gold metallization to allow

either a conductive epoxy or eutectic solder die attach process. This

device is well suited for Millimeter-wave Point-to-Point Radio, LMDS,

SATCOM and VSAT applications.

18.0-25.0 GHz GaAs MMIC

Receiver

Page 1 of 7

Sub-harmonic Receiver

Integrated LNA, LO Buffer, Image Reject Mixer

+2.0 dBm LO Drive Level

2.5 dB Noise Figure

15.0 dB Image Rejection

100% On-Wafer RF, DC and Noise Figure Testing

100% Visual Inspection to MIL-STD-883 Method 2010

Features

General Description

Absolute Maximum Ratings

Supply Voltage (Vd)

Supply Current (Id1,Id2)

Gate Bias Voltage (Vg)

Input Power (RF Pin)

Storage Temperature (Tstg)

Operating Temperature (Ta)

Channel Temperature (Tch)

+4.5 VDC

180, 165 mA

+0.3 VDC

0.0 dBm

-55 to MTTF Table

MTTF Table

Chip Device Layout

(3) Channel temperature affects a device's MTTF. It is

recommended to keep channel temperature as low as

possible for maximum life.

3

3

Units

GHz

GHz

GHz

GHz

dB

dB

dBm

dBc

dB

dB

dBm

VDC

VDC

VDC

mA

mA

Min.

18.0

18.0

7.5

DC

-

-

-

-

-

-

-

-

-

-1.2

-

-

Typ.

-

-

-

-

12.0

8.0

+2.0

15.0

2.5

50.0/60.0

-7.0

+3.5

+4.0

-0.3

130

116

Max.

25.0

21.0

11.5

3.0

-

-

-

-

-

-

-

+4.5

+4.5

+0.1

155

140

Parameter

Frequency Range (RF) Upper Side Band

Frequency Range (RF) Lower Side Band

Frequency Range (LO)

Frequency Range (IF)

Input Return Loss RF (S11)

Small Signal Conversion Gain RF/IF (S21)

Image Rejection

Noise Figure (NF)

Isolation LO/RF @ LOx1/LOx2

Input Third Order Intercept (IIP3)

Drain Bias Voltage (Vd1)

Drain Bias Voltage (Vd2)

Gate Bias Voltage (Vg1,2)

Supply Current (Id1) (Vd1=3.5V, Vg=-0.3V Typical)

Supply Current (Id2) (Vd2=4.0V,Vg=-0.3V Typical)

(1) Measured using constant current.

(2) Measured using LO Input drive level of +2.0 dBm.

1,2

2

2

2

R1006