Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2005 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

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Page 4 of 7

May 2005 - Rev 13-May-05

18.0-25.0 GHz GaAs MMIC

Receiver

R1006

App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1 and Vd2 with

Vd1=3.5V, Id1=130mA and Vd2=4.0V, Id2=116mA. It is also recommended to use active biasing to keep the currents constant as the RF

power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation

constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain

supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage.The typical

gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to

sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.

App Note [2] Bias Arrangement - Each DC pad (Vd1,2 and Vg1,2) needs to have DC bypass capacitance (~100-200 pF) as close to the device

as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.

MTTFTable (TBD)

Backplate

Temperature

55 deg Celsius

75 deg Celsius

95 deg Celsius

Channel

Temperature

deg Celsius

deg Celsius

deg Celsius

FITs

E+

E+

E+

MTTF Hours

E+

E+

E+

Rth

C/W

C/W

C/W

Bias Conditions: Vd1=3.5V, Vd2=4.0V, Id1=130 mA, Id2=116 mA

These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.

Typical Application

Mimix Broadband MMIC-based 18.0-25.0 GHz Receiver Block Diagram

(Changing LO and IF frequencies as required allows design to operate as high as 25.0 GHz)

RF IN

17.7-19.7 GHz

IR Mixer

LNA

Coupler

XR1006

BPF

IF Out

2 GHz

LO(+2.0dBm)

7.85-8.85 GHz (USB Operation)

9.85-10.85 GHz (LSB Operation)

AGC Control

Mimix Broadband's 18.0-25.0 GHz XR1006 GaAs MMIC Receiver can be used in saturated radio applications and linear modulation schemes

up to 16 QAM. The receiver can be used in upper and lower sideband applications from 18.0-25.0 GHz.