SFH640

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Vishay Semiconductors

Rev. 1.8, 02-Dec-2020

2

Document Number: 83682

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability

Fig. 1 - Power Dissipation vs. Ambient Temperature

Fig. 2 - Maximum Forward Current vs. Ambient Temperature

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

VR

6V

Forward current

IF

60

mA

Power dissipation

Pdiss

100

mW

OUTPUT

Power dissipation

Pdiss

150

mW

Collector emitter voltage

VCEO

300

V

Collector base voltage

VCBO

300

V

Emitter base voltage

VEBO

7V

Collector current

IC

50

mA

Power dissipation

Pdiss

150

mW

COUPLER

Storage temperature range

Tstg

-55 to +150

°C

Operating temperature range

Tamb

-55 to +115

°C

Soldering temperature

t = 10 s

Tsld

260

°C

10

100

1000

10000

0

50

100

150

200

0

20406080

100

120

Axis Title

T

amb - Ambient Temperature (°C)

Phototransistor

IR Diode

10

100

1000

10000

0

10

20

30

40

50

60

70

0

20406080

100

120

Axis Title

T

amb - Ambient Temperature (°C)

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 10 mA

VF

-1.2

1.5

V

Reverse voltage

IR = 10 μA

VR

6-

-

V

Reverse current

VR = 6 V

IR

-0.01

10

μA

Capacitance

VF = 0 V, f = 1 kHz

CI

-30-

pF

OUTPUT

Collector emitter breakdown voltage

ICE = 1 mA, RBE = 1 M

Ω

BVCEO

300

-

-

V

Voltage emitter base

IEB = 10 μA

BVBEO

7-

-

V