© Semiconductor Components Industries, LLC, 2001

April, 2001 – Rev. 0

1

Publication Order Number:

AND8048/D

AND8048/D

SPICE Device Model

NTHD5905T1

Dual P–Channel 1.8 V (G–S) MOSFET

CHARACTERISTICS

Recovery Characteristics

DESCRIPTION

The attached SPICE Model describes typical electrical

characteristics of the p–channel vertical DMOS. The

sub–circuit model was extracted and optimized over a 25

°C

to 125

°C temperature range under pulse conditions for 0 to

–5 volts gate drives. Saturated output impedance model

accuracy has been maximized for gate biases near

threshold. A novel gate–to–drain feedback capacitor

network is used to model gate charge characteristics while

Model parameter values are optimized to provide a best fit

to measure electrical data and are not intended as an exact

physical description of a device.

Figure 1. Model Sub–circuit

R

M

1

2

3

4

G

S

D

DB

M

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate

data sheet of the same number for guaranteed specification limits.

http://onsemi.com

APPLICATION NOTE