AND8048/D

http://onsemi.com

4

H–SPICE

.SUBCKT Si5905DC 4 1 2

M1 3 1 2 2 PMOS W = 183649u L = 0.50u

M1 2 1 2 4 NMOS W = 183649u L = 1.05u

R1 4 3

RTEMP 18E–3

CGS 1 2

540E–12

DBD 2 4

DBD

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.MODEL PMOS

PMOS (LEVEL = 3

TOX = 1.7E–8

+RS = 45E–3

RD = 0

NSUB = 0.67E16

+KP = 4.7E–5

UO = 400

+VMAX = 0

XJ = 5E–7

KAPPA = 20E–3

+ETA = 1E–4

TPG = –1

+IS = 0

LD = 0

CAPOP = 5

+CGSO = 0

CGDO = 0

CGBO = 0

+TLEV = 1

BEX = –1.5

TCV = 1.5E–3

+NFS = 0.8E12

DELTA = 0.1)

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.MODEL NMOS

NMOS (LEVEL = 3

TOX = 1.7E–8

+NSUB = 16E16

NSF = 10E11

TPG = –1)

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.MODEL DBD D (CJO = 200E–12

VJ = 0.38

M = 0.31

+RS = 0.6

FC = 0.5

IS = 1E–8

TT = 9E–8

N = 1

BV = 8.5)

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.MODEL RTEMP R (TC1 = 7.5E–3

TC2 = 5.5E–6)

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.ENDS