AOSS21115C

Symbol

Min

Typ

Max

Units

BVDSS

-20

V

VDS=-20V, VGS=0V

-1

TJ=55°C

-5

IGSS

±10

μA

VGS(th)

Gate Threshold Voltage

-0.15

-0.55

-0.95

V

33

40

TJ=125°C

43

52

42

55

mΩ

54

72

mΩ

gFS

20

S

VSD

-0.7

-1

V

IS

-2

A

Ciss

930

pF

Coss

90

pF

Crss

80

pF

Rg

15

30

Ω

Qg(4.5V)

8.5

17

nC

Qgs

1

nC

Qgd

2.5

nC

tD(on)

12

ns

tr

11

ns

tD(off)

82

ns

tf

35

ns

trr

25

ns

Qrr

37

nC

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT

ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE

PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

SWITCHING PARAMETERS

Gate Source Charge

Gate Drain Charge

Total Gate Charge

VGS=-4.5V, VDS=-10V,

ID=-4.5A

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Gate resistance

f=1MHz

IDSS

μA

Zero Gate Voltage Drain Current

Drain-Source Breakdown Voltage

ID=-250mA, VGS=0V

VGS=-4.5V, ID=-4.5A

RDS(ON)

Static Drain-Source On-Resistance

VGS=-1.8V, ID=-3.5A

m

Ω

Reverse Transfer Capacitance

VGS=0V, VDS=-10V, f=1MHz

VDS=VGS, ID=-250mA

Output Capacitance

Forward Transconductance

IS=-1A, VGS=0V

VDS=-5V, ID=-4.5A

VDS=0V, VGS=±8V

Maximum Body-Diode Continuous Current

Input Capacitance

Gate-Body leakage current

Diode Forward Voltage

DYNAMIC PARAMETERS

VGS=-2.5V, ID=-4A

Body Diode Reverse Recovery Charge

Body Diode Reverse Recovery Time

IF=-4.5A, di/dt=500A/ms

Turn-Off DelayTime

Turn-Off Fall Time

VGS=-4.5V, VDS=-10V,

RL=2.22W, RGEN=3W

IF=-4.5A, di/dt=500A/ms

Turn-On Rise Time

Turn-On DelayTime

A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation P

D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialT

J=25°C.

D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

ms pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)=150°C. The SOA curve provides a single pulse rating.

Rev.1.0: March 2019

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