MP8820

4

Rev. 1.00

ELECTRICAL CHARACTERISTICS TABLE

Description

Symbol

Min

Typ

Max

Units

Conditions

DIGITAL CHARACTERISTICS

(CONT’D)

0.5

V

4.5

–50

50

µA

3-State Leakage

–50

50

µA

Digital Timing Specifications

For testing, rise time = fall time =

10 ns. Output loading = 50 pF.

Write time (analog input tracking)

150

ns

Conversion Time

500

ns

Input mux set-up time

150

ns

Input mux hold time

50

ns

25

NOTES

1

2

Guaranteed but not production tested.

3

Digital input levels should not go below ground or exceed the positive supply voltage, otherwise damage may occur.

4

See timing diagram.

5

Measured as the change in the bipolar zero error over temperature. This error does not include the error introduced by the

external reference drift.

6

This error does not include the error introduced by the external reference drift.

7

INL is measured as a 7-bit +sign ADC with 8-bit resolution.

Specifications are subject to change without notice

6 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

All Digital Inputs

. . . . . . . . . . . . .

Storage Temperature

–65 to 150

. . . . . . . . . . . . . . . . . . . .

Lead Temperature (Soldering 10 seconds)

+300

. . . . . . .

ESD Rating

2000 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Package Power Dissipation Rating @ 75

SSOP, SOIC

1000mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derates above 75

6mW/

. . . . . . . . . . . . . . . . . . . . . .

NOTES:

1

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a

stress rating only and functional operation at or above this specification is not implied. Exposure to maximum rating

conditions for extended periods may affect device reliability.

2

Any input pin which can see a value outside the absolute maximum ratings should be protected by Schottky diode clamps

(HP5082-2835) from input pin to the supplies.

All inputs have protection diodes which will protect the device from short

transients outside the supplies of less than 100mA for less than 100