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STM32F103CBU7TR Datasheet(PDF) 55 Page - STMicroelectronics |
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STM32F103CBU7TR Datasheet(HTML) 55 Page - STMicroelectronics |
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55 / 116 page ![]() DS5319 Rev 18 55/116 STM32F103x8, STM32F103xB Electrical characteristics 115 Low-speed internal (LSI) RC oscillator Wakeup time from low-power mode The wakeup times given in Table 26 is measured on a wakeup phase with an 8-MHz HSI RC oscillator. The clock source used to wake up the device depends from the current operating mode: Stop or Standby mode: the clock source is the RC oscillator Sleep mode: the clock source is the clock that was set before entering Sleep mode. All timings are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 9. tsu(HSI)(4) HSI oscillator startup time -1 - 2 µs IDD(HSI)(4) HSI oscillator power consumption - - 80 100 µA 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. 2. Refer to AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from www.st.com. 3. Specified by design, not tested in production. 4. Evaluated by characterization, not tested in production, unless otherwise specified. 5. The actual frequency of HSI oscillator may be impacted by a reflow, but does not drift out of the specified range. Table 25. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI(2) 2. Evaluated by characterization, not tested in production, unless otherwise specified. Frequency 30 40 60 kHz tsu(LSI)(3) 3. Specified by design, not tested in production. LSI oscillator startup time - - 85 µs IDD(LSI)(3) LSI oscillator power consumption - 0.65 1.2 µA Table 24. HSI oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit |
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