2

RF Device Data

NXP Semiconductors

A2G22S160- 01SR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain- Source Voltage

VDSS

125

Vdc

Gate- Source Voltage

VGS

–8, 0

Vdc

Operating Voltage

VDD

0to +55

Vdc

Storage Temperature Range

Tstg

–65 to +150

C

Case Operating Temperature Range

TC

–55 to +150

C

Operating Junction Temperature Range (1)

TJ

–55 to +225

C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value(2)

Unit

Thermal Resistance, Junction to Case

Case Temperature 76C, 32 W CW, 48 Vdc, IDQ = 150 mA, 2140 MHz

RJC

1.7

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22- A114)

1B

Machine Model (per EIA/JESD22- A115)

A

Charge Device Model (per JESD22- C101)

IV

Table 4. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Drain- Source Leakage Current

(VGS =–8Vdc, VDS =55Vdc)

IDSS

—

—

5

mAdc

Drain- Source Breakdown Voltage

(VGS =–8Vdc, ID =16.2mAdc)

V(BR)DSS

150

—

—

Vdc

On Characteristics

Gate Threshold Voltage

(VDS =10Vdc, ID =16.2 Adc)

VGS(th)

–3.8

–3.0

–2.3

Vdc

Gate Quiescent Voltage

(VDD =48Vdc, ID = 150 mAdc, Measured in Functional Test)

VGS(Q)

–3.6

–3.0

–2.3

Vdc

1. Continuous use at maximum temperature will affect MTTF.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

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