12

RF Device Data

NXP Semiconductors

A2G22S160- 01SR3

Table 10. Load Pull Performance — Maximum Power Tuning

VDD =28Vdc, IDQ =140 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle

f

(MHz)

Zsource

()

Zin

()

Max Output Power

P1dB

Zload (1)

()

Gain (dB)

(dBm)

(W)

D

(%)

AM/PM

()

1805

1.26 – j5.77

1.57 + j5.91

8.58 – j5.21

19.9

51.6

145

60.9

–41

1840

1.64 – j5.93

1.84 + j6.11

9.10 – j5.90

19.9

51.4

137

59.2

–38

1880

1.97 – j6.03

2.06 + j6.39

8.40 – j6.54

19.7

51.1

129

56.5

–34

f

(MHz)

Zsource

()

Zin

()

Max Output Power

P3dB

Zload (2)

()

Gain (dB)

(dBm)

(W)

D

(%)

AM/PM

()

1805

1.26 – j5.77

1.46 + j5.88

9.56 – j3.93

18.3

52.2

167

68.4

–34

1840

1.64 – j5.93

1.64 + j6.03

9.50 – j4.67

17.7

52.1

163

67.1

–32

1880

1.97 – j6.03

1.98 + j6.41

9.42 – j5.46

17.8

51.9

156

64.2

–29

(1) Load impedance for optimum P1dB power.

(2) Load impedance for optimum P3dB power.

Zsource = Measured impedance presented to the input of the device at the package reference plane.

Zin

= Impedance as measured from gate contact to ground.

Zload = Measured impedance presented to the output of the device at the package reference plane.

Table 11. Load Pull Performance — Maximum Drain Efficiency Tuning

VDD =28Vdc, IDQ =140 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle

f

(MHz)

Zsource

()

Zin

()

Max Drain Efficiency

P1dB

Zload (1)

()

Gain (dB)

(dBm)

(W)

D

(%)

AM/PM

()

1805

1.26 – j5.77

1.51 + j6.34

6.08 – j0.80

21.8

50.3

107

70.2

–38

1840

1.64 – j5.93

1.71 + j6.74

5.51 – j1.09

22.1

50.0

100

69.9

–36

1880

1.97 – j6.03

2.05 + j7.16

5.18 – j1.44

22.1

49.6

92

68.8

–34

f

(MHz)

Zsource

()

Zin

()

Max Drain Efficiency

P3dB

Zload (2)

()

Gain (dB)

(dBm)

(W)

D

(%)

AM/PM

()

1805

1.26 – j5.77

1.58 + j6.43

6.86 – j0.08

20.0

51.2

130

77.2

–36

1840

1.64 – j5.93

1.91 + j6.84

6.28 – j0.28

20.3

50.8

120

77.5

–35

1880

1.97 – j6.03

2.42 + j7.30

5.75 – j0.50

20.3

50.3

108

77.0

–37

(1) Load impedance for optimum P1dB efficiency.

(2) Load impedance for optimum P3dB efficiency.

Zsource = Measured impedance presented to the input of the device at the package reference plane.

Zin

= Impedance as measured from gate contact to ground.

Zload = Measured impedance presented to the output of the device at the package reference plane.

Input Load Pull

Tuner and Test

Circuit

Device

Under

Test

Zsource Zin

Zload

Output Load Pull

Tuner and Test

Circuit