BFG25ASLASHX datasheet(2/12 Pages) NXP

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NXP Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFG25A/X

FEATURES

• Low current consumption

(100

µA to 1 mA)

• Low noise figure

• Gold metallization ensures

excellent reliability.

APPLICATIONS

• RF low power amplifiers, such as

pocket telephones, paging

systems, with signal frequencies

up to 2 GHz.

DESCRIPTION

NPN silicon wideband transistor in a

four-lead dual emitter SOT143B

plastic package (cross emitter).

PINNING

DESCRIPTION

collector

emitter

base

emitter

Fig.1 SOT143B.

Marking code:

%MU.

handbook, 2 columns

Top view

MSB014

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

−−

VCEO

collector-emitter voltage

−−

collector current (DC)

−−

6.5

Ptot

total power dissipation

Ts ≤ 165 °C

−−

hFE

DC current gain

IC = 0.5 mA; VCE = 1 V

5080200

transition frequency

IC = 1 mA; VCE =1V;

f = 500 MHz; Tamb =25 °C

3.5

−

GHz

GUM

maximum unilateral power gain

IC = 0.5 mA; VCE =1V;

f = 1 GHz; Tamb =25 °C

−

noise ﬁgure

IC = 0.5 mA; VCE =1V;

f = 1 GHz;

Γ = Γopt; Tamb =25 °C

−

1.8

−

IC = 1 mA; VCE = 1 V; f = 1 GHz;

Γ = Γopt; Tamb =25 °C

−

Rev. 04 - 27 November 2007

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