Nexperia

BSP52

NPN Darlington transistor

11. Test information

006aaa003

IBon (100 %)

IB

input pulse

(idealized waveform)

IBoff

90 %

10 %

IC (100 %)

IC

td

ton

90 %

10 %

tr

output pulse

(idealized waveform)

tf

t

ts

toff

Fig. 2. Transistor switching time definition

RC

R2

R1

DUT

aaa-027547

Vo

RB

(probe)

450 Ω

(probe)

450 Ω

oscilloscope

oscilloscope

VBB

VI

VCC

VI = 10 V; T = 200 µs; tp = 6 µs; tr = tf ≤ 3 ns.

R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω.

VBB = -1.8 V; VCC = 10.7 V.

Oscilloscope: input impedance Zi = 50 Ω.

Fig. 3. Test circuit or switching times

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

BSP52

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2018. All rights reserved

Product data sheet

23 February 2018

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