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BSP52 Datasheet(PDF) 1 Page - Nexperia B.V. All rights reserved |
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BSP52 Datasheet(HTML) 1 Page - Nexperia B.V. All rights reserved |
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1 / 10 page  BSP52 NPN Darlington transistor 23 February 2018 Product data sheet 1. General description NPN Darlington transistor in an SOT223 plastic package. PNP complement: BSP62 2. Features and benefits • High current of 1 A • Low voltage of 80 V • Integrated diode and resistor • AEC-Q101 qualified 3. Applications • Industrial high gain amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 90 V VCES collector-emitter voltage base short-circuited to emitter - - 80 V IC collector current - - 1 A ICM peak collector current - - 2 A hFE DC current gain VCE = 10 V; IC = 150 mA [1] 1000 - - [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. |
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