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BCV63_63B

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Product data sheet

Rev. 4 — 4 August 2010

4 of 12

Nexperia

BCV63; BCV63B

NPN general-purpose double transistors

7.

Characteristics

[1]

Group selection will be done on TR1. Due to matched dies, hFE values for TR2 are the same as for TR1.

[2]

VBEsat decreases by about 1.7 mV/K with increasing temperature.

[3]

VBE decreases by about 2 mV/K with increasing temperature.

Table 8.

Characteristics

Tj =25 C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

ICBO

collector-base

cut-off current

VCB =30V; IE =0A

-

-

15

nA

VCB =30V; IE =0A;

Tj = 150 C

--

5

A

VCEsat

collector-emitter

saturation voltage

IC =10mA;

IB =0.5 mA

-75

300

mV

VBEsat

base-emitter

saturation voltage

IC =10mA;

IB =0.5 mA

[2] -

700

-

mV

Transistor TR1

hFE

DC current gain

VCE =5V; IC =2 mA

BCV63

110

-

800

BCV63B

200

-

450

VCEsat

collector-emitter

saturation voltage

IC =100 mA; IB = 5 mA

-

250

650

mV

VBEsat

base-emitter

saturation voltage

IC =100 mA; IB =5mA

[2] -

850

-

mV

VBE

base-emitter voltage

IC =2mA; VCE =5V

[3] 600

650

750

mV

IC =10mA; VCE =5V

[3] --

820

mV

fT

transition frequency

VCE =5V; IC =10 mA;

f=100MHz

100

-

-

MHz

Cc

collector capacitance

VCB =10V;

IE =ie =0 A; f = 1 MHz

-4

-pF

Transistor TR2

hFE

DC current gain

VCE =700 mV;

IC =2mA

[1]

BCV63

110

-

800

BCV63B

200

-

450

VCEsat

collector-emitter

saturation voltage

IC =100 mA; IB = 5 mA

-

250

-

mV

VBE

base-emitter voltage

IC =2mA;

VCE =700 mV

[3] -

700

-

mV