PEMB10_PUMB10

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© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 3 — 3 January 2012

3 of 15

NXP Semiconductors

PEMB10; PUMB10

PNP/PNP resistor-equipped transistors; R1 = 2.2 k

, R2 = 47 k

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Reflow soldering is the only recommended soldering method.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

VCBO

collector-base voltage

open emitter

-

50

V

VCEO

collector-emitter voltage

open base

-

50

V

VEBO

emitter-base voltage

open collector

-

5V

VI

input voltage

positive

-

+5

V

negative

-

12

V

IO

output current

-

100

mA

ICM

peak collector current

-

100

mA

Ptot

total power dissipation

Tamb  25 C

[1]

PEMB10 (SOT666)

[2] -200

mW

PUMB10 (SOT363)

-

200

mW

Per device

Ptot

total power dissipation

Tamb  25 C

[1]

PEMB10 (SOT666)

[2] -300

mW

PUMB10 (SOT363)

-

300

mW

Tj

junction temperature

-

150

C

Tamb

ambient temperature

65

+150

C

Tstg

storage temperature

65

+150

C