PEMB10_PUMB10

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© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 3 — 3 January 2012

6 of 15

NXP Semiconductors

PEMB10; PUMB10

PNP/PNP resistor-equipped transistors; R1 = 2.2 k

, R2 = 47 k

7.

Characteristics

[1]

Characteristics of built-in transistor.

Table 8.

Characteristics

Tamb =25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

ICBO

collector-base

cut-off current

VCB = 50 V; IE =0 A

-

-

100 nA

ICEO

collector-emitter

cut-off current

VCE = 30 V; IB =0 A

-

-

100 nA

VCE = 30 V; IB =0 A;

Tj = 150 C

--

5

A

IEBO

emitter-base

cut-off current

VEB = 5V; IC =0A

-

-

180 A

hFE

DC current gain

VCE = 5V; IC = 10 mA

100

-

-

VCEsat

collector-emitter

saturation voltage

IC = 5mA; IB = 0.25 mA

-

-

100 mV

VI(off)

off-state input

voltage

VCE = 5V; IC = 100 A-

0.6

0.5

V

VI(on)

on-state input

voltage

VCE = 0.3 V; IC = 5mA

1.1

0.75 -

V

R1

bias resistor 1 (input)

1.54

2.20

2.86

k



R2/R1

bias resistor ratio

17

21

26

Cc

collector capacitance VCB = 10 V; IE =ie =0A;

f= 1MHz

--3

pF

fT

transition frequency

VCB = 5V; IC = 10 mA;

f = 100 MHz

[1] -

180

-

MHz