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LM3402 Datasheet(PDF) 17 Page - National Semiconductor (TI) |
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LM3402 Datasheet(HTML) 17 Page - National Semiconductor (TI) |
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17 / 22 page ![]() Design Example 1: LM3402 (Continued) size such as SOD-123 in a 40V, 0.5A Schottky diode at 350 mA is approximately 0.4V and the θ JA is 206˚C/W. Power dissipation and temperature rise can be calculated as: P D = 0.298 x 0.4 = 119 mW T RISE = 0.119 x 206 = 24.5˚C According to these calculations the SOD-123 diode will meet the requirements. Heating and dissipation are among the factors most difficult to predict in converter design. If pos- sible, a footprint should be used that is capable of accepting both SOD-123 and a larger case size, such as SMA. A larger diode with a higher forward current rating will generally have a lower forward voltage, reducing dissipation, as well as having a lower θ JA, reducing temperature rise. C B and CF The bootstrap capacitor C B should always be a 10 nF ce- ramic capacitor with X7R dielectric. A 25V rating is appropri- ate for all application circuits. The linear regulator filter ca- pacitor C F should always be a 100 nF ceramic capacitor, also with X7R dielectric and a 25V rating. EFFICIENCY To estimate the electrical efficiency of this example the power dissipation in each current carrying element can be calculated and summed. This term should not be confused with the optical efficacy of the circuit, which depends upon the LEDs themselves. Total output power, P O, is calculated as: P O =IF xVO = 0.35 x 3.7 = 1.295W Conduction loss, P C, in the internal MOSFET: P C =(IF 2 xR DSON)xD= (0.35 2 x 1.5) x 0.154 = 28 mW Gate charging and VCC loss, P G, in the gate drive and linear regulator: P G =(IIN-OP +fSW xQG)xVIN P G =(600x10 -6 + 468000x3x10-9)x24=48mW Switching loss, P S, in the internal MOSFET: P S =0.5xVIN xIF x(tR +tF)xfSW P S =0.5x24x0.35x(40x10 -9) x 468000 = 78 mW AC rms current loss, P CIN, in the input capacitor: P CIN =IIN(rms) 2 x ESR = (0.126)2 x 0.006 = 0.1 mW (negli- gible) DCR loss, P L, in the inductor P L =IF 2 x DCR = 0.352 x 0.096 = 11.8 mW Recirculating diode loss, P D = 119 mW Current Sense Resistor Loss, P SNS =92mW Electrical efficiency, η =P O /(PO + Sum of all loss terms) = 1.295 / (1.295 + 0.377) = 77% DIE TEMPERATURE T LM3402 =(PC +PG +PS)x θ JA T LM3402 = (0.028 + 0.05 + 0.078) x 200 = 31˚C Design Example 2: LM3402HV The second example application is an RGB backlight for a flat screen monitor. A separate boost regulator provides a 60V ±5% DC input rail that feeds three LM3402HV current regulators to drive one series array each of red, green, and blue 1W LEDs. The target for average LED current is 350 mA ±5% in each string. The monitor will adjust the color temperature dynamically, requiring fast PWM dimming of each string with external, parallel MOSFETs. 1W green and blue InGaN LEDs have a typical forward voltage of 3.5V, however red LEDs use AlInGaP technology with a typical forward voltage of 2.9V. In order to match color properly the design requires 14 green LEDs, twice as many as needed for the red and blue LEDs. This example will follow the design for the green LED array, providing the necessary information to repeat the exercise for the blue and red LED arrays. The circuit schematic for Design Example 2 is the same as the Typical Application on the front page. The bill of materials (green array only) can be found in Table 2 at the end of this datasheet. OUTPUT VOLTAGE Green Array: V O(G) = 14 x 3.5 + 0.2 = 49.2V Blue Array: V O(B) = 7 x 3.5 + 0.2 = 24.7V Red Array: V O(R) = 7 x 2.9 + 0.2 = 20.5V R ON and tON A compromise in switching frequency is needed in this ap- plication to balance the requirements of magnetics size and efficiency. The high duty cycle translates into large conduc- tion losses and high temperature rise in the IC. For best response to a PWM dimming signal this circuit will not use an output capacitor; hence a moderate switching frequency of 300 kHz will keep the inductance from becoming so large that a custom-wound inductor is needed. This design will use only surface mount components, and the selection of off-the- shelf SMT inductors for switching regulators is poor at 1000 µH and above. R ON is selected from the equation for switch- ing frequency as follows: R ON = 49.2 / (1.34 x 10 -10 x3x105) = 1224 k Ω The closest 1% tolerance resistor is 1.21 M Ω. The switching frequency and on-time of the circuit can then be found using the equations relating R ON and tON to fSW: f SW = 49.2 / (1210000 x 1.34 x 10 -10) = 303 kHz www.national.com 17 |
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