Nexperia

BAT74S

Dual Schottky barrier diode

BAT74S

All information provided in this document is subject to legal disclaimers.

©

Nexperia B.V. 2012. All rights reserved

Product data sheet

22 November 2012

3 / 10

Symbol

Parameter

Conditions

Min

Max

Unit

Tamb

ambient temperature

-55

125

°C

Tstg

storage temperature

-65

150

°C

Per device

series connection

-

60

V

VR

reverse voltage

-

30

V

IF

forward current

[1]

-

110

mA

IFRM

repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5

-

200

mA

[1] If both diodes are in forward operation at the same moment, total device current is maximum 110 mA.

If one diode is in reverse and the other in forward operation at the same moment, total device current is

maximum 200 mA.

mbl889

0

100

200

300

Ptot

(mW)

150

75

0

Tamb (°C)

Fig. 1. Power derating curve

6. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

Rth(j-a)

thermal resistance

from junction to

ambient

in free air

[1]

-

-

416

K/W

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.