© Nexperia B.V. 2017. All rights reserved

PDTB1XXXU_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 6 May 2014

13 of 27

Nexperia

PDTB1xxxU series

500 mA, 50 V PNP resistor-equipped transistors

Tamb = 25 C

f = 1 MHz; Tamb = 25 C

Fig 22. PDTB123EU: Collector current as a function of

collector-emitter voltage; typical values

Fig 23. PDTB123EU: Collector capacitance as a

function of collector-base voltage; typical

values

VCE = 5 V; Tamb = 25 C

Fig 24. PDTB123EU: Transition frequency as a function of collector current; typical values of built-in transistor

VCE (V)

0-5

-4

-2

-3

-1

aaa-012626

-0.2

-0.3

-0.1

-0.4

-0.5

IC

(A)

0

IB = -0.75 mA

-1

-1.25

-1.75

-1.5

-2.5

-2.25

-2.75

-2

-3

VCB (V)

0

-50

-40

-20

-30

-10

aaa-012636

20

10

30

40

Cc

(pF)

0

aaa-012064

102

10

103

fT

(MHz)

1

IC (mA)

-10-1

-103

-102

-1

-10