PDTD113ZU datasheet(20/27 Pages) NEXPERIA

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PDTB1XXXU_SER

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Product data sheet

Rev. 1 — 6 May 2014

20 of 27

Nexperia

PDTB1xxxU series

500 mA, 50 V PNP resistor-equipped transistors

VCE = 5 V

(1) Tamb = 100 C

(2) Tamb = 25 C

(3) Tamb = 40 C

IC/IB = 20

(1) Tamb = 100 C

(2) Tamb = 25 C

(3) Tamb = 40 C

Fig 46. PDTB114EU: DC current gain as a function of

collector current; typical values

Fig 47. PDTB114EU: Collector-emitter saturation

voltage as a function of collector current;

typical values

VCE = 0.3 V

(1) Tamb = 40 C

(2) Tamb = 25 C

(3) Tamb = 100 C

VCE = 5 V

(1) Tamb = 40 C

(2) Tamb = 25 C

(3) Tamb = 100 C

Fig 48. PDTB114EU: On-state input voltage as a

function of collector current; typical values

Fig 49. PDTB114EU: Off-state input voltage as a

function of collector current; typical values

aaa-012643

102

103

hFE

IC (mA)

-10-1

-103

-102

-1

-10

(1)

(2)

(3)

aaa-012635

IC (mA)

-1

-103

-102

-10

-10-1

VCEsat

(V)

-10-2

(1)

(2)

(3)

aaa-012646

-10

-1

-102

VI(on)

(V)

-10-1

IC (mA)

-10-1

-103

-102

-1

-10

(1)

(2)

(3)

IC (mA)

-10-1

-10

-1

aaa-012649

-1

-10

VI(off)

(V)

-10-1

(1)

(3)

(2)

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