1997 Jul 02

2

Philips Semiconductors

Product specification

NPN high-voltage transistors

BF591; BF593

FEATURES

• Low current (max. 150 mA)

• High voltage (max. 210 V).

APPLICATIONS

• Telephone systems.

DESCRIPTION

NPN high-voltage transistor in a TO-202; SOT128B plastic

package.

PINNING

PIN

DESCRIPTION

1

emitter

2

collector, connected to mounting base

3

base

Fig.1

Simplified outline (TO-202; SOT128B)

and symbol.

handbook, halfpage

2

1

3

MAM305

12 3

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BF591

−

210

V

BF593

−

250

V

collector-emitter voltage

open base

BF591

−

170

V

BF593

−

210

V

peak collector current

−

300

mA

total power dissipation

−

1.3

W

DC current gain

30

−

30

−