1997 Jul 02

3

Philips Semiconductors

Product specification

NPN high-voltage transistors

BF591; BF593

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

CHARACTERISTICS

Note

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BF591

−

210

V

BF593

−

250

V

collector-emitter voltage

open base

BF591

−

170

V

BF593

−

210

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

150

mA

peak collector current

−

300

mA

peak base current

−

100

mA

total power dissipation

−

1.3

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient in free air

73

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector cut-off current

−

50

nA

−

1

µA

emitter cut-off current

−

100

nA

DC current gain

note 1

30

−

30

−

20

−