BF992 datasheet(4/12 Pages) PHILIPS

4 / 12 page

1999 Aug 11

Philips Semiconductors

Product speciﬁcation

Silicon N-channel dual gate MOS-FET

BF992

THERMAL CHARACTERISTICS

Note

1. Device mounted on a ceramic substrate, 8 mm

× 10 mm × 0.7 mm.

STATIC CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

DYNAMIC CHARACTERISTICS

Common source; Tamb =25 °C; VDS =10V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient in free air

note 1

460

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

±V(BR)G1-SS gate 1-source breakdown voltage

VG2-S =VDS = 0; IG1-SS = ±10 mA

±V(BR)G2-SS gate 2-source breakdown voltage

VG1-S =VDS = 0; IG2-SS = ±10 mA

−V(P)G1-S

gate 1-source cut-off voltage

VG2-S =4V; VDS = 10 V; ID =20 µA

0.2

1.3

−V

(P)G2-S

gate 2-source cut-off voltage

VG1-S = 0; VDS = 10 V; ID =20 µA

0.2

1.1

±I

G1-SS

gate 1 cut-off current

VG2-S =VDS = 0; VG1-S = ±7V

−

±I

G2-SS

gate 2 cut-off current

VG1-S =VDS = 0; VG2-S = ±7V

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

yfs

forward transfer admittance

−

Cig1-s

input capacitance at gate 1

f = 1 MHz

−

Cig2-s

input capacitance at gate 2

f = 1 MHz

−

1.7

−

Cos

output capacitance

f = 1 MHz

−

Crs

reverse transfer capacitance

f = 1 MHz

−

noise ﬁgure

f = 200 MHz; GS =2mS

−

1.2

−

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