BFC520 datasheet(6/12 Pages) PHILIPS

6 / 12 page

1997 Sep 10

Philips Semiconductors

Product speciﬁcation

NPN wideband cascode transistor

BFC520

Fig.6

Maximum stable gain as a function of

frequency; typical values.

VC2-E1 =3V.

handbook, halfpage

MGG221

10−2

10−1

f (GHz)

MSG

(dB)

120

S21/S12

(dB)

110

IC =

5 mA

2 mA

1 mA

Fig.7

Maximum stable gain and isolation as

functions of collector current; typical values.

VC2-E1 =3V.

handbook, halfpage

MGG222

10−1

IC (mA)

MSG

(dB)

100

S21/S12

(dB)

110

102

f = 500 MHz

900 MHz

2 GHz

Fig.8

Insertion gain as a function of collector

current; typical values.

VC2-E1 = 3 V; RS =50 Ω; XS =XL = opt; f = 900 MHz.

handbook, halfpage

MGG223

10−1

IC (mA)

S21

(dB)

110

102

RL = 220 Ω

Ω

Fig.9

Third order intercept point as a function of

collector current; typical values.

Point tuned for maximum gain with double slug tuners.

VC2-E1 = 3 V; f = 900 MHz.

handbook, halfpage

−30

MGG224

10−1

−20

−10

IC (mA)

IP3

(dBm)

110

102

output

input

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