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BFC520 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BFC520
Description  NPN wideband cascode transistor
PDF  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BFC520 Datasheet(HTML) 2 Page - NXP Semiconductors

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1997 Sep 10
2
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC520
FEATURES
• Small size
• High power gain at low bias current and high
frequencies
• High reverse isolation
• Low noise figure
• Gold metallization ensures excellent reliability
• Minimum operating voltage VC2−E1 =1V.
APPLICATIONS
• Low noise, high gain amplifiers
• Oscillator buffer amplifiers
• Wideband voltage-to-current converters.
DESCRIPTION
Cascode amplifier with two discrete dies in a surface
mount, 5-pin SOT353 (S-mini) package. The amplifier is
primarily intended for low power RF communications
equipment, such as pagers and cordless phones and has
a very low feedback capacitance resulting in high isolation.
PINNING - SOT353
SYMBOL
PIN
DESCRIPTION
b2
1
base 2
e1
2
emitter 1
b1
3
base 1
c1/e2
4
collector 1/emitter 2
c2
5
collector 2
Fig.1 Simplified outline and symbol.
handbook, halfpage
3
1
4
5
2
Top view
MAM212
c2
b2
c1/e2
b1
e1
QUICK REFERENCE DATA
VC2−E1 = 3 V; IC = 20 mA; VB2 = 2.1 V; b2 connected to ground via 1 nF (0603) capacitor, e1 connected directly to
ground.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Cre
feedback capacitance CB1−C2
−−
10
fF
maximum isolation
f = 900 MHz; Tamb =25 °C
−−63
dB
f = 2 GHz; Tamb =25 °C
−−38
dB
MSG
maximum stable power gain
(narrowband)
f = 900 MHz; Tamb =25 °C
31
dB
f = 2 GHz; Tamb =25 °C
19
dB
F
noise figure
IC = 5 mA; f = 900 MHz; ΓS = Γopt
1.3
1.6
dB
Rth j-s
thermal resistance from
junction to soldering point
single loaded
−−
230
K/W
double loaded
−−
115
K/W
s
21 s12
2



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