BFG505SLASHX datasheet(4/16 Pages) PHILIPS

4 / 16 page

1998 Oct 02

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistors

BFG505; BFG505/X

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

2. VCE = 6 V; IC = 5 mA; RL =50 Ω; Tamb =25 °C;

fp = 900 MHz; fq = 902 MHz;

measured at 2fp − fq = 898 MHz and 2fq − fp = 904 MHz.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

VCB =6V; IE =0

−−

hFE

DC current gain

IC = 5 mA; VCE = 6 V; see Fig.3

120

250

emitter capacitance

IC =ic =0 VEB = 0.5 V; f = 1 MHz

−

0.4

−

collector capacitance

VCB =6V; IE =ie = 0; f = 1 MHz

−

0.3

−

Cre

feedback capacitance

IC = 0; VCB = 6 V; f = 1 MHz; see Fig.4

−

0.2

−

transition frequency

IC = 5 mA; VCE = 6 V; f = 1 GHz;

see Fig.5

−

GHz

GUM

maximum unilateral

power gain; note 1

IC = 5 mA; VCE =6V;

Tamb =25 °C; f = 900 MHz

−

Ic = 5 mA; VCE =6V;

Tamb =25 °C; f = 2 GHz

−

S

21

insertion power gain

Ic = 5 mA; VCE =6V;

Tamb =25 °C; f = 900 MHz

−

noise ﬁgure

s = Γopt; IC = 1.25 mA; VCE =6V;

Tamb =25 °C; f = 900 MHz

−

1.2

1.7

Γs = Γopt; IC = 5 mA; VCE =6V;

Tamb =25 °C; f = 900 MHz

−

1.6

2.1

s = Γopt; IC = 1.25 mA; VCE =6V;

Tamb =25 °C; f = 2 GHz

−

1.9

−

PL1

output power at 1 dB gain

compression

IC = 5 mA; VCE =6V; RL =50 Ω;

Tamb =25 °C; f = 900 MHz

−

dBm

ITO

third order intercept point

note 2

−

dBm

–

() 1S

–

()

--------------------------------------------------------------

dB.

log

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