BFG505SLASHX datasheet(5/16 Pages) PHILIPS

Part #	BFG505/X

Description	NPN 9 GHz wideband transistors

PDF	16 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 16 page

1998 Oct 02

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistors

BFG505; BFG505/X

Fig.3

DC current gain as a function of collector

current.

VCE =6V.

handbook, halfpage

250

100

150

hFE

200

MRA639

10−3

10−2

10−1

110

IC (mA)

102

Fig.4

Feedback capacitance as a function of

collector-base voltage.

IC = 0; f = 1 MHz.

handbook, halfpage

0.4

0.3

0.1

0.2

Cre

(pF)

VCB (V)

MRA640

Fig.5

Transition frequency as a function of

collector current.

Tamb =25 °C; f = 1 GHz.

handbook, halfpage

(GHz)

IC (mA)

MRA641

10−1

110

102

VCE = 6 V

VCE = 3 V

Fig.6 Gain as a function of collector current.

handbook, halfpage

IC (mA)

812

MSG

GUM

gain

(dB)

MRA642

VCE = 6 V; f = 900 MHz.

GUM = maximum unilateral power gain;

MSG = maximum stable gain;

Gmax = maximum available gain.

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