BFG591 datasheet(4/12 Pages) PHILIPS

4 / 12 page

1995 Sep 04

Philips Semiconductors

Product speciﬁcation

NPN 7 GHz wideband transistor

BFG591

CHARACTERISTICS

Tj =25 °C (unless otherwise speciﬁed).

Notes

1. GUM is the maximum unilateral power gain, assuming s12 is zero.

2. dim = 60 dB (DIN45004B);

Vp =Vo; Vq =Vo −6 dB; Vr =Vo −6 dB;

fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured at f(p+q-r) = 793.25 MHz.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

IC = 0.1 mA; IE =0

−−

V(BR)CES

collector-emitter breakdown voltage

IC = 10 mA; IB =0

−−

V(BR)EBO

emitter-base breakdown voltage

IE = 0.1 mA; IC =0

−−

ICBO

collector-base leakage current

IE = 0; VCB =10V

−−

100

hFE

DC current gain

IC = 70 mA; VCE = 8 V

6090250

Cre

feedback capacitance

IB =Ib = 0; VCE =12V;

f = 1 MHz

−

0.7

−

transition frequency

IC = 70 mA; VCE =12V;

f = 1 GHz

−

GHz

GUM

maximum unilateral power gain;

note 1

IC = 70 mA; VCE =12V;

f = 900 MHz; Tamb =25 °C

−

IC = 70 mA; VCE =12V;

f = 2 GHz; Tamb =25 °C

−

7.5

−

insertion power gain

IC = 70 mA; VCE =12V;

f = 1 GHz; Tamb =25 °C

−

output voltage

note 2

−

700

−

–

() 1s

–

()

------------------------------------------------------------ dB.

log

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