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PTH05T210WAS Datasheet(PDF) 2 Page - Texas Instruments |
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PTH05T210WAS Datasheet(HTML) 2 Page - Texas Instruments |
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2 / 29 page ![]() www.ti.com PTH05T210 2,6 5, 9 13 + 12 VI Track GND TT 7,8 3,4 GND GND +Sense 10 L O A D −Sense GND + 1 Inhibit INH/UVLO Track 14 11 −Sense +Sense UDG−05097 RTT 1% 0.05 W (Optional) CO 470 µF (Required) VO RSET 1% 0.05 W (Required) CI 1000 µF (Required) RUVLO 1% 0.05 W (Opional) VOAdj TurboTranst VO VI PTH05T210W SLTS263D – NOVEMBER 2005 – REVISED OCTOBER 2006 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. A. RSET is required to set the output voltage higher than 0.7 V. See the Electrical Characteristics table. ORDERING INFORMATION For the most current package and ordering information, see the Package Option Addendum at the end of this datasheet, or see the TI website at www.ti.com. 2 Submit Documentation Feedback |
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