BFQ149 datasheet(2/6 Pages) PHILIPS

2 / 6 page

September 1995

Philips Semiconductors

Product speciﬁcation

PNP 5 GHz wideband transistor

BFQ149

DESCRIPTION

PNP transistor in a SOT89 envelope.

It is intended for use in

UHF applications such as broadband

aerial amplifiers (30 to 860 MHz) and

in microwave amplifiers such as radar

systems, spectrum analyzers, etc.,

using SMD technology.

PINNING

DESCRIPTION

Code: FG

emitter

collector

base

Fig.1 SOT89.

fpage

Bottom view

MBK514

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector tab.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCEO

collector-emitter voltage

open base

−−−15

DC collector current

−−−100

Ptot

total power dissipation

up to Ts = 135 °C (note 1)

−−

hFE

DC current gain

IC = −70 mA; VCE = −10 V; Tj = 25 °C20

−

transition frequency

IC = −75 mA; VCE = −10 V;

f = 500 MHz; Tj = 25 °C

−

GHz

GUM

maximum unilateral power gain

IC = −50 mA; VCE = −10 V;

f = 500 MHz; Tamb = 25 °C

−

noise ﬁgure

IC = −50 mA; VCE = −10 V;

Rs =60 Ω; f = 500 MHz;

Tamb = 25 °C

−

3.75

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−20

VCEO

collector-emitter voltage

open base

−−15

VEBO

emitter-base voltage

open collector

−−3V

DC collector current

−−100

ICM

peak collector current

> 1 MHz

−−150

Ptot

total power dissipation

up to Ts = 135 °C (note 1)

−

Tstg

storage temperature

−65

150

°C

junction temperature

−

150

°C

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