BFQ166 datasheet(2/8 Pages) PHILIPS

2 / 8 page

1997 Oct 02

Philips Semiconductors

Product speciﬁcation

NPN video transistor

BFQ166

FEATURES

•Low output capacitance

• High gain bandwidth

• Good thermal stability

• Gold metallization ensures

excellent reliability

• High current applicability

• Surface mounting.

APPLICATIONS

• Video amplifier cascode driver in

high-resolution colour graphics

monitors.

DESCRIPTION

NPN video transistor in a SOT223

plastic package.

PINNING

DESCRIPTION

emitter

base

emitter

collector

Fig.1

Simplified outline

(SOT223).

page

123

MSB002 - 1

Top view

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector lead.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector lead.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−

VCER

collector-emitter voltage

RBE = 100 Ω−

−

collector current (DC)

−−

500

Ptot

total power dissipation

Ts ≤ 105 °C; note 1

−−

hFE

DC current gain

IC = 300 mA; VCE = 5 V; see Fig.4

−

transition frequency

IC = 300 mA; VCE = 5 V; f = 100 MHz;

Tamb =25 °C

−−

GHz

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VCER

collector-emitter voltage

RBE = 100 Ω−

VEBO

emitter-base voltage

open collector

−

collector current (DC)

−

500

Ptot

total power dissipation

Ts ≤ 105 °C; note 1; see Fig.3

−

Tstg

storage temperature

−65

+150

°C

junction temperature

−

175

°C

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