BFQ166 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1997 Oct 02

Philips Semiconductors

Product speciﬁcation

NPN video transistor

BFQ166

THERMAL CHARACTERISTICS

Notes

1. Ts is the temperature at the soldering point of the collector lead.

2. Device mounted on a printed-circuit board measuring 40

× 40 × 1 mm (collector pad 35 × 17 mm).

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

Ts = 105 °C; Ptot =2W;

notes 1 and 2

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

IC = 5 mA; IE =0

−−

V(BR)CER

collector-emitter breakdown voltage

IC = 10 mA; RBE = 100 Ω

−−

V(BR)CEO

collector-emitter breakdown voltage

IC = 10 mA; IB =0

−−

ICES

collector-emitter cut-off current

VCE = 10 V; VBE =0

−−

100

µA

hFE

DC current gain

IC = 300 mA; VCE = 5 V; see Fig.4 50

−

collector capacitance

IE =ie = 0; VCB =5V; f=1MHz

−

4.5

−

Ccb

collector-base capacitance

IC =ic = 0; VCB = 5 V; f = 1 MHz;

see Fig.6

−

3.2

−

transition frequency

IC = 300 mA; VCE =5V;

f = 100 MHz; Tamb =25 °C;

see Fig.5

−−

GHz

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