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BFQ245 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BFQ245
Description  PNP video transistor
PDF  6 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BFQ245 Datasheet(HTML) 2 Page - NXP Semiconductors

  BFQ245 Datasheet HTML 1Page - NXP Semiconductors BFQ245 Datasheet HTML 2Page - NXP Semiconductors BFQ245 Datasheet HTML 3Page - NXP Semiconductors BFQ245 Datasheet HTML 4Page - NXP Semiconductors BFQ245 Datasheet HTML 5Page - NXP Semiconductors BFQ245 Datasheet HTML 6Page - NXP Semiconductors  
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1996 Sep 04
2
Philips Semiconductors
Product specification
PNP video transistor
BFQ245
APPLICATIONS
• Primarily intended for cascode
output and buffer stages in high
resolution colour monitors.
DESCRIPTION
PNP silicon transistor encapsulated
in a 3-lead plastic SOT128B package.
PINNING
PIN
DESCRIPTION
1
emitter
2
collector
3
base
Fig.1 Simplified outline SOT128B.
handbook, halfpage
12
3
MGA323
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−−100
V
IC
collector current (DC)
−−100
mA
Ptot
total power dissipation
Tmb =25 °C
−
3.75
W
fT
transition frequency
IC = −25 mA; VCE = −10 V
1
−
GHz
Cre
feedback capacitance
IC = 0; VCB = −10 V
1.7
−
pF
Tj
junction temperature
−
175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−−100
V
VCER
collector-emitter voltage
RBE = 100 Ω−
−95
V
VEBO
emitter-base voltage
open collector
−−3V
IC
collector current (DC)
see Fig.2
−−100
mA
IC(AV)
average collector current
see Fig.2
−−100
mA
Ptot
total power dissipation
Tmb =25 °C; see Fig.3
−
3.75
W
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−
175
°C



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