BFQ245 datasheet(3/6 Pages) PHILIPS

3 / 6 page

1996 Sep 04

Philips Semiconductors

Product speciﬁcation

PNP video transistor

BFQ245

Fig.2 DC SOAR.

Tmb =25 °C.

handbook, halfpage

MBG506

−102

−10

−102

−103

−10

VCE (V)

(mA)

Fig.3 Power derating curve.

VCE ≤−50 V.

handbook, halfpage

Ptot

(W)

100

200

Tmb (

oC)

MBG507

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-mb

thermal resistance from junction to

mounting base

Ptot = 3.75 W; Tmb =25 °C

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

IC = −0.1 mA; IE =0

−100

−−

V(BR)CER

collector-emitter breakdown voltage IC = −1 mA; RBE = 100 Ω−95

−−

V(BR)EBO

emitter-base breakdown voltage

IC = 0; IE = −0.1 mA

−3

−−

ICES

collector-emitter leakage current

VCE = −50 V; VBE =0

−−−100

µA

hFE

DC current gain

IC = −25 mA; VCE = −10 V;

see Fig.4

−−

transition frequency

IC = −25 mA; VCE = −10 V;

f = 500 MHz; see Fig.5

−

GHz

Cre

feedback capacitance

IC = 0; VCB = −10 V;

f = 1 MHz; see Fig.6

−

1.7

−

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