DMT4008LFDF

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

40

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) VGS = 10V

TA = +25°C

TA = +70°C

ID

11.8

9.4

A

Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)

IDM

70

A

Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%)

ISM

70

A

Continuous Source-Drain Diode Current

IS

2.2

A

Avalanche Current, L = 0.3mH

IAS

13.3

A

Avalanche Energy, L = 0.3mH

EAS

26.5

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

PD

0.8

W

Thermal Resistance, Junction to Ambient (Note 5)

RθJA

155

°C/W

Total Power Dissipation (Note 6)

TA = +25°C

PD

2.0

W

Thermal Resistance, Junction to Ambient (Note 6)

RθJA

63

°C/W

Thermal Resistance, Junction to Case (Note 6)

TC = +25°C

RθJC

8.9

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

40

—

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current (TJ = +25°C)

IDSS

—

—

1

µA

VDS = 32V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1

1.7

3

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

7.8

9.5

mΩ

VGS = 10V, ID = 10A

—

10.6

15.5

VGS = 4.5V, ID = 8.5A

Diode Forward Voltage

VSD

—

0.7

1.0

V

VGS = 0V, IS = 10A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

1179

—

pF

VDS = 20V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

384

—

Reverse Transfer Capacitance

Crss

—

42

—

Gate Resistance

RG

—

1.7

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

QG

—

8.3

—

nC

VDD = 20V, ID = 10A

Total Gate Charge (VGS = 10V)

QG

—

17.1

—

Gate-Source Charge

QGS

—

2.4

—

Gate-Drain Charge

QGD

—

3.4

—

Turn-On Delay Time

tD(ON)

—

3.5

—

ns

VDD = 20V, VGS = 10V,

RG = 6Ω, ID = 10A

Turn-On Rise Time

tR

—

3.7

—

Turn-Off Delay Time

tD(OFF)

—

17.1

—

Turn-Off Fall Time

tF

—

6.4

—

Reverse Recovery Time

tRR

—

19.8

—

ns

IF = 10A, di/dt = 100A/μs

Reverse Recovery Charge

QRR

—

8.8

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

DMT4008LFDF

Datasheet number: DS39333 Rev. 4 - 2

3 of 8

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March 2020

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